IPB60R040 Series

Catalog

MOSFET, N-CH, 600V, 50A, 150DEG C, 227W ROHS COMPLIANT: YES

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPB60R040CFD7ATMA1	108 nC	227 W	4.5 V	N-Channel	50 A	MOSFET (Metal Oxide)	10 V	40 mOhm	600 V	4351 pF	PG-TO263-3-2	20 V	-55 °C	150 °C	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies IPB60R040C7ATMA1		227 W	4 V	N-Channel	50 A	MOSFET (Metal Oxide)	10 V	40 mOhm	600 V	4340 pF		20 V	-55 °C	150 °C	Surface Mount	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	107 nC