TQM300NB06DCR RLG

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Taiwan Semiconductor Corporation

MOSFET, DUAL, N-CH, 60V, 25A, PDFN56U ROHS COMPLIANT: YES

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Active

Taiwan Semiconductor Corporation

MOSFET, DUAL, N-CH, 60V, 25A, PDFN56U ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TQM300NB06DCR RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	25 A, 6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	20 nC
Grade	Automotive
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	48 W, 2.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.8 V

Part	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Grade	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Technology	Configuration	Gate Charge (Qg) (Max) @ Vgs	Power - Max
Taiwan Semiconductor Corporation TQM300NB06CR RLG	20 nC	60 V	N-Channel	20 V	-55 °C	175 ░C	AEC-Q101	6 A 27 A	8-PDFNU (5x6)	8-PowerTDFN	30 mOhm	Automotive	Surface Mount Wettable Flank	3.1 W 56 W	1009 pF	3.8 V	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TQM300NB06DCR RLG		60 V			-55 °C	175 ░C	AEC-Q101	6 A 25 A	8-PDFNU (5x6)	8-PowerTDFN	30 mOhm	Automotive	Surface Mount Wettable Flank			3.8 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	20 nC	2.5 W 48 W

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General part information

Mosfet Array 60V 6A (Ta), 25A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount, Wettable Flank 8-PDFNU (5x6)

Technical documentation and resources