MOSFET, N-CH, 60V, 27A, PDFN56 ROHS COMPLIANT: YES
| Part | Gate Charge (Qg) (Max) @ Vgs [x] | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Grade | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Technology | Configuration | Gate Charge (Qg) (Max) @ Vgs | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 20 nC | 60 V | N-Channel | 20 V | -55 °C | 175 ░C | AEC-Q101 | 6 A 27 A | 8-PDFNU (5x6) | 8-PowerTDFN | 30 mOhm | Automotive | Surface Mount Wettable Flank | 3.1 W 56 W | 1009 pF | 3.8 V | MOSFET (Metal Oxide) | |||
Taiwan Semiconductor Corporation | 60 V | -55 °C | 175 ░C | AEC-Q101 | 6 A 25 A | 8-PDFNU (5x6) | 8-PowerTDFN | 30 mOhm | Automotive | Surface Mount Wettable Flank | 3.8 V | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20 nC | 2.5 W 48 W |