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SCT060HU75G3AG - STMICROELECTRONICS SCT025H120G3AG

SCT060HU75G3AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 750 V, 58 MOHM TYP., 30 A IN AN HU3PAK PACKAGE

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Search across all available documentation for this part.

DocumentsTN1378+25
SCT060HU75G3AG - STMICROELECTRONICS SCT025H120G3AG

SCT060HU75G3AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 750 V, 58 MOHM TYP., 30 A IN AN HU3PAK PACKAGE

Deep-Dive with AI

DocumentsTN1378+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT060HU75G3AG
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)18 V, 15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29 nC
Input Capacitance (Ciss) (Max) @ Vds680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)185 W
Rds On (Max) @ Id, Vgs78 mOhm
Supplier Device PackageHU3PAK
Vgs (Max)4.2 V
Vgs(th) (Max) @ Id4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 15.29
10$ 10.78
100$ 8.22
Digi-Reel® 1$ 15.29
10$ 10.78
100$ 8.22
Tape & Reel (TR) 600$ 7.94
NewarkEach (Supplied on Cut Tape) 1$ 11.64
10$ 9.75
25$ 9.26
50$ 8.81
100$ 8.39
250$ 8.08
500$ 7.83
1000$ 7.65

Description

General part information

SCT060HU75G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.