SCT060HU75G3AG Series

Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package

Catalog

Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package

Part	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics SCT060HU75G3AG	78 mOhm	N-Channel	4.2 V	30 A	Surface Mount	185 W	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	680 pF	HU3PAK	4.2 V	29 nC	15 V 18 V	-55 °C	175 ░C	750 V

Catalog

Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.