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DMN1045UFR4-7 - Package Image for X2-DFN1010-3

DMN1045UFR4-7

Active
Diodes Inc

MOSFET BVDSS: 8V~24V X2-DFN1010-3 T&R 3K

Deep-Dive with AI

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DMN1045UFR4-7 - Package Image for X2-DFN1010-3

DMN1045UFR4-7

Active
Diodes Inc

MOSFET BVDSS: 8V~24V X2-DFN1010-3 T&R 3K

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN1045UFR4-7
Current - Continuous Drain (Id) @ 25°C3.2 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.8 nC
Input Capacitance (Ciss) (Max) @ Vds375 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]500 mW
Supplier Device PackageX2-DFN1010-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
Digi-Reel® 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.08
30000$ 0.08
75000$ 0.07

Description

General part information

DMN1045UFR4 Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.