Catalog
N-Channel MOSFET
Description
AI
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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N-Channel MOSFET
N-Channel MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | X2-DFN1010-3 | N-Channel | 12 V | MOSFET (Metal Oxide) | 1.5 V 4.5 V | 3-XFDFN | 1 V | 500 mW | 3.2 A | 375 pF | 8 V | 4.8 nC | Surface Mount |