Technical Specifications
Parameters and characteristics for this part
| Specification | STD3NK60Z-1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.00 | |
| 75 | $ 0.80 | |||
| 150 | $ 0.63 | |||
| 525 | $ 0.54 | |||
| 1050 | $ 0.44 | |||
| 2025 | $ 0.41 | |||
| 5025 | $ 0.39 | |||
| 10050 | $ 0.37 | |||
Description
General part information
STD3NK60Z-1 Series
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources
Flyers (5 of 7)
AN4337
Application NotesTN1378
Technical Notes & ArticlesFlyers (5 of 7)
Flyers (5 of 7)
Flyers (5 of 7)
DS2912
Product SpecificationsTN1224
Technical Notes & ArticlesTN1156
Technical Notes & ArticlesAN4250
Application NotesAN2344
Application NotesAN2842
Application NotesFlyers (5 of 7)
Flyers (5 of 7)
UM1575
User ManualsFlyers (5 of 7)