STD3NK60Z-1 Series

N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in IPAK package

Catalog

N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in IPAK package

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology
STMicroelectronics STD3NK60Z-1	600 V	10 V	30 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK	3.6 Ohm	45 W	2.4 A	N-Channel	Through Hole	4.5 V	-55 °C	150 °C	311 pF	11.8 nC	MOSFET (Metal Oxide)

Catalog

N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in IPAK package

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.