IR2011

Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 8DIP

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Search across all available documentation for this part.

IR2011

Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 8DIP

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2011

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	1 A
Current - Peak Output (Source, Sink) [custom]	1 A
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.7 V, 2.2 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2011 Series

Part	Input Type	Supplier Device Package	Channel Type	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case
Infineon Technologies IR2011SPBF	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011STR	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011STRPBF	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011	Inverting	8-PDIP	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-DIP			1 A	1 A	Through Hole	150 °C	-40 °C	2	200 V	20 V	10 VDC	0.3 in	7.62 mm
Infineon Technologies IR2011S	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011PBF	Inverting	8-PDIP	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-DIP			1 A	1 A	Through Hole	150 °C	-40 °C	2	200 V	20 V	10 VDC	0.3 in	7.62 mm
Infineon Technologies IR2011PBF	Inverting	8-PDIP	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-DIP			1 A	1 A	Through Hole	150 °C	-40 °C	2	200 V	20 V	10 VDC	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IR2011 Series

High-Side or Low-Side Gate Driver IC Inverting 8-PDIP

Documents

Technical documentation and resources

No documents available