IR2011 Series

Catalog

IC GATE DRVR HI/LOW SIDE 8SOIC

Part	Input Type	Supplier Device Package	Channel Type	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case
Infineon Technologies IR2011SPBF	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011STR	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011STRPBF	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011	Inverting	8-PDIP	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-DIP			1 A	1 A	Through Hole	150 °C	-40 °C	2	200 V	20 V	10 VDC	0.3 in	7.62 mm
Infineon Technologies IR2011S	Inverting	8-SOIC	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	150 °C	-40 °C	2	200 V	20 V	10 VDC
Infineon Technologies IR2011PBF	Inverting	8-PDIP	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-DIP			1 A	1 A	Through Hole	150 °C	-40 °C	2	200 V	20 V	10 VDC	0.3 in	7.62 mm
Infineon Technologies IR2011PBF	Inverting	8-PDIP	Independent	High-Side Low-Side	20 ns	35 ns	N-Channel MOSFET	0.7 V 2.2 V	8-DIP			1 A	1 A	Through Hole	150 °C	-40 °C	2	200 V	20 V	10 VDC	0.3 in	7.62 mm