DMTH8030LPDW-13

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Diodes Inc

80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8

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Diodes Inc

80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH8030LPDW-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	28.5 A
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	631 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	41 W, 3.1 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	PowerDI5060-8 (Type UXD)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

80V 175°C Dual N-Channel Enhancement Mode MOSFET PowerDI5060-8

Part	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case
Diodes Inc DMTH8030LPDW-13	80 V	MOSFET (Metal Oxide)	Surface Mount	10.4 nC	26 mOhm	PowerDI5060-8 (Type UXD)	-55 °C	175 ░C	2 N-Channel (Dual)	3.1 W 41 W	631 pF	2.5 V	28.5 A	8-PowerTDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.