DMTH8030LPDW Series

80V 175°C Dual N-Channel Enhancement Mode MOSFET PowerDI5060-8

Catalog

80V 175°C Dual N-Channel Enhancement Mode MOSFET PowerDI5060-8

Part	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case
Diodes Inc DMTH8030LPDW-13	80 V	MOSFET (Metal Oxide)	Surface Mount	10.4 nC	26 mOhm	PowerDI5060-8 (Type UXD)	-55 °C	175 ░C	2 N-Channel (Dual)	3.1 W 41 W	631 pF	2.5 V	28.5 A	8-PowerTDFN

80V 175°C Dual N-Channel Enhancement Mode MOSFET PowerDI5060-8

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Low Input Capacitance

• Fast Switching Speed

• Wettable Flank for Improved Optical Inspection

• Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH8030LPDWQ)

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.