DMN90H8D5HCT

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMN90H8D5HCT

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.9 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	7 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

NRND = Not Recommended for New Design

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)
Diodes Inc DMN90H8D5HCTI	7.9 nC	900 V	5 V	30 V	2.5 A	7 Ohm	470 pF	ITO-220AB	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack Isolated Tab	Through Hole	10 V	N-Channel
Diodes Inc DMN90H8D5HCT	7.9 nC	900 V	5 V	30 V	2.5 A	7 Ohm	470 pF	TO-220-3	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3	Through Hole	10 V	N-Channel	125 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Technical documentation and resources