DMN90H8D5HCTI Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)
Diodes Inc DMN90H8D5HCTI	7.9 nC	900 V	5 V	30 V	2.5 A	7 Ohm	470 pF	ITO-220AB	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3 Full Pack Isolated Tab	Through Hole	10 V	N-Channel
Diodes Inc DMN90H8D5HCT	7.9 nC	900 V	5 V	30 V	2.5 A	7 Ohm	470 pF	TO-220-3	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3	Through Hole	10 V	N-Channel	125 W

NRND = Not Recommended for New Design

• Low Input Capacitance

• High BVDSSRating for Power Application

• Low Input/Output Leakage

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.