IPB80P04P405ATMA1

Obsolete

Infineon Technologies

IPB80P04P4-05 IS AN AUTOMOTIVE MOSFET OFFERING -40V, P-CH, 4.9 MΩ MAX, D2PAK, OPTIMOS™-P2, AEC QUALIFIED, MSL1, 175°C OPERATING TEMP, ROHS COMPLIANT.

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DocumentsDatasheet Infineon-MA005710100-MaterialContentSheet-v01_00-EN +1

IPB80P04P405ATMA1

Obsolete

Infineon Technologies

IPB80P04P4-05 IS AN AUTOMOTIVE MOSFET OFFERING -40V, P-CH, 4.9 MΩ MAX, D2PAK, OPTIMOS™-P2, AEC QUALIFIED, MSL1, 175°C OPERATING TEMP, ROHS COMPLIANT.

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DocumentsDatasheet Infineon-MA005710100-MaterialContentSheet-v01_00-EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB80P04P405ATMA1

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB80P Series

Part	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Qualification	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPB80P04P407ATMA1	88 W	4 V	P-Channel	Automotive	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 V	Surface Mount	10 V	6085 pF	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	89 nC	7.4 mOhm	PG-TO263-3-2	AEC-Q101
Infineon Technologies IPB80P03P4L07ATMA1	88 W	2 V	P-Channel	Automotive	-55 °C	175 ░C	MOSFET (Metal Oxide)		Surface Mount	4.5 V 10 V	5700 pF	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		6.9 mOhm	PG-TO263-3-2	AEC-Q101	80 nC	5 V	-16 V
Infineon Technologies IPB80P04P405ATMA2		4 V	P-Channel	Automotive	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 V	Surface Mount		10300 pF	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		5.2 mOhm	PG-TO263-3-2	AEC-Q101	151 nC			125 W
Infineon Technologies IPB80P04P405ATMA1		4 V	P-Channel	Automotive	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 V	Surface Mount	10 V	10300 pF	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4.9 mOhm	PG-TO263-3-2	AEC-Q101	151 nC			125 W
Infineon Technologies IPB80P03P4L04ATMA2		2 V	P-Channel	Automotive	-55 °C	175 ░C	MOSFET (Metal Oxide)		Surface Mount		11300 pF	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	160 nC	4.4 mOhm	PG-TO263-3-2	AEC-Q101		5 V	-16 V	137 W
Infineon Technologies IPB80P04P4L06ATMA1	88 W	2.2 V	P-Channel	Automotive	-55 °C	175 ░C	MOSFET (Metal Oxide)	16 V	Surface Mount	4.5 V 10 V		40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		6.4 mOhm	PG-TO263-3-2	AEC-Q101	104 nC				6580 pF
Infineon Technologies IPB80P04P4L08ATMA1		2.2 V	P-Channel	Automotive	-55 °C	175 ░C	MOSFET (Metal Oxide)	16 V	Surface Mount	4.5 V 10 V	5430 pF	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		7.9 mOhm	PG-TO263-3-2	AEC-Q101	92 nC			75 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB80P Series

P-Channel 40 V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources

Datasheet

Infineon-MA005710100-MaterialContentSheet-v01_00-EN

Material Content SheetInfo

IPP_B_I80P04P4-05 Data Sheet

Data Sheets