TRANS MOSFET P-CH 40V 80A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) D2PAK T/R
| Part | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | FET Type | Grade | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Qualification | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) [Max] | Vgs (Max) [Min] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 88 W | 4 V | P-Channel | Automotive | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 20 V | Surface Mount | 10 V | 6085 pF | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 89 nC | 7.4 mOhm | PG-TO263-3-2 | AEC-Q101 | |||||
Infineon Technologies | 88 W | 2 V | P-Channel | Automotive | -55 °C | 175 ░C | MOSFET (Metal Oxide) | Surface Mount | 4.5 V 10 V | 5700 pF | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 6.9 mOhm | PG-TO263-3-2 | AEC-Q101 | 80 nC | 5 V | -16 V | ||||
Infineon Technologies | 4 V | P-Channel | Automotive | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 20 V | Surface Mount | 10300 pF | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5.2 mOhm | PG-TO263-3-2 | AEC-Q101 | 151 nC | 125 W | ||||||
Infineon Technologies | 4 V | P-Channel | Automotive | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 20 V | Surface Mount | 10 V | 10300 pF | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4.9 mOhm | PG-TO263-3-2 | AEC-Q101 | 151 nC | 125 W | |||||
Infineon Technologies | 2 V | P-Channel | Automotive | -55 °C | 175 ░C | MOSFET (Metal Oxide) | Surface Mount | 11300 pF | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 160 nC | 4.4 mOhm | PG-TO263-3-2 | AEC-Q101 | 5 V | -16 V | 137 W | |||||
Infineon Technologies | 88 W | 2.2 V | P-Channel | Automotive | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 16 V | Surface Mount | 4.5 V 10 V | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 6.4 mOhm | PG-TO263-3-2 | AEC-Q101 | 104 nC | 6580 pF | |||||
Infineon Technologies | 2.2 V | P-Channel | Automotive | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 16 V | Surface Mount | 4.5 V 10 V | 5430 pF | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 7.9 mOhm | PG-TO263-3-2 | AEC-Q101 | 92 nC | 75 W |