SSM3K122TU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2A UFM

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K122TU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.4 nC
Input Capacitance (Ciss) (Max) @ Vds	195 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	123 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	Vgs (Max)
Toshiba Semiconductor and Storage SSM3K122TU,LF	20 V	3.4 nC	195 pF	Surface Mount	2 A	MOSFET (Metal Oxide)	1 V	500 mW	150 °C	123 mOhm	N-Channel	4 V	1.5 V	UFM	10 V

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General part information

N-Channel 20 V 2A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources