MOSFET N-CH 20V 2A UFM
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Operating Temperature | Rds On (Max) @ Id, Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 3.4 nC | 195 pF | Surface Mount | 2 A | MOSFET (Metal Oxide) | 1 V | 500 mW | 150 °C | 123 mOhm | N-Channel | 4 V | 1.5 V | UFM | 10 V |