IXFK25N90

Obsolete

IXYS

MOSFET N-CH 900V 25A TO264AA

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Obsolete

IXYS

MOSFET N-CH 900V 25A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK25N90

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC
Input Capacitance (Ciss) (Max) @ Vds	10800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	330 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
IXYS IXFK25N90	900 V	25 A	MOSFET (Metal Oxide)	20 V	240 nC	-55 °C	150 °C	N-Channel	TO-264-3 TO-264AA	Through Hole	TO-264AA (IXFK)	560 W	10 V	10800 pF	330 mOhm	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 25A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources