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MOSFET N-CH 900V 25A TO264AA
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Package / Case | Mounting Type | Supplier Device Package | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 900 V | 25 A | MOSFET (Metal Oxide) | 20 V | 240 nC | -55 °C | 150 °C | N-Channel | TO-264-3 TO-264AA | Through Hole | TO-264AA (IXFK) | 560 W | 10 V | 10800 pF | 330 mOhm | 5 V |