
IRF3205LPBF
ObsoleteInfineon Technologies
IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 8 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.

IRF3205LPBF
ObsoleteInfineon Technologies
IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 8 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF3205LPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3247 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 200 W |
| Rds On (Max) @ Id, Vgs | 8 mOhm |
| Supplier Device Package | TO-262 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRF3205 Series
N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-262
Documents
Technical documentation and resources