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IRF3205LPBF - TO-262-3

IRF3205LPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 8 MOHM;

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IRF3205LPBF - TO-262-3

IRF3205LPBF

Obsolete
Infineon Technologies

IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 8 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF3205LPBF
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs146 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3247 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRF3205 Series

N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-262