TRANS MOSFET N-CH SI 55V 110A 3-PIN(3+TAB) TO-262 TUBE
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 10 V | 110 nC | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 55 V | 3450 pF | I2PAK TO-262-3 Long Leads TO-262AA | 4 V | 75 A | 6.5 mOhm | TO-262 | Through Hole | 170 W | |||
Infineon Technologies | N-Channel | 10 V | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 55 V | I2PAK TO-262-3 Long Leads TO-262AA | 4 V | 110 A | TO-262 | Through Hole | 200 W | 146 nC | 3247 pF | 8 mOhm | |||
Infineon Technologies | N-Channel | 10 V | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 55 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | 110 A | D2PAK | Surface Mount | 200 W | 146 nC | 3247 pF | 8 mOhm |