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BSZ018NE2LSATMA1 - 8 PowerTDFN

BSZ018NE2LSATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 25 V, 153 A, 0.0018 OHM, TSDSON-FL, SURFACE MOUNT

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BSZ018NE2LSATMA1 - 8 PowerTDFN

BSZ018NE2LSATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 25 V, 153 A, 0.0018 OHM, TSDSON-FL, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ018NE2LSATMA1
Current - Continuous Drain (Id) @ 25°C40 A, 23 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]39 nC
Input Capacitance (Ciss) (Max) @ Vds2800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)69 W, 2.1 W
Rds On (Max) @ Id, Vgs1.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.63
10$ 1.03
100$ 0.69
500$ 0.54
1000$ 0.50
2000$ 0.48
Digi-Reel® 1$ 1.63
10$ 1.03
100$ 0.69
500$ 0.54
1000$ 0.50
2000$ 0.48
Tape & Reel (TR) 5000$ 0.40
10000$ 0.40
NewarkEach (Supplied on Cut Tape) 1$ 1.29
10$ 0.96
25$ 0.88
50$ 0.80
100$ 0.72
250$ 0.67
500$ 0.61
1000$ 0.55

Description

General part information

BSZ018 Series

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).