BSZ018 Series

Catalog

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 1.8 MOHM;

Part	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies BSZ018N04LS6ATMA1	N-Channel	40 V	-55 °C	175 ░C	Surface Mount	2.5 W 83 W	31 nC	27 A 40 A	1.8 mOhm	4.5 V 10 V	MOSFET (Metal Oxide)	2.3 V	8-PowerTDFN	2700 pF	20 V
Infineon Technologies BSZ018NE2LSATMA1	N-Channel	25 V	-55 °C	150 °C	Surface Mount	2.1 W 69 W		23 A 40 A	1.8 mOhm	4.5 V 10 V	MOSFET (Metal Oxide)	2 V	8-PowerTDFN	2800 pF	20 V	39 nC
Infineon Technologies BSZ018NE2LSIATMA1	N-Channel	25 V	-55 °C	150 °C	Surface Mount	2.1 W 69 W	36 nC	22 A 40 A	1.8 mOhm	4.5 V 10 V	MOSFET (Metal Oxide)	2 V	8-PowerTDFN	2500 pF	20 V