Specification	RN1116,LF(CT

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-416, SC-75
Package Name	SSM
Power - Max	100 mW
Resistor - Base (R1) Resistance	4.7 kOhm
Resistor - Emitter Base (R2)	10 kOhms
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1116 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/10 kΩ, SOT-416(SSM)

Part	Frequency - Transition	Transistor Type	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Package / Case	Power - Max	Vce Saturation (Max)	Resistor - Base (R1) Resistance	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Package Name
Toshiba Semiconductor and Storage RN1116MFV,L3F	250 MHz	NPN Pre-Biased	10 kOhms	50	500 nA	SOT-723	150 mW	300 mV	4.7 kOhm	Surface Mount	50 V	0.1 mA	VESM
Toshiba Semiconductor and Storage RN1116,LF(CT	250 MHz	NPN Pre-Biased	10 kOhms	50	500 nA	SC-75 SOT-416	100 mW	300 mV	4.7 kOhm	Surface Mount	50 V	0.1 mA	SSM

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