RN1116 Series

Catalog

TRANS PREBIAS NPN 50V 0.1A VESM

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Resistor - Emitter Base (R2)	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)
Toshiba Semiconductor and Storage RN1116MFV,L3F	50	150 mW	10 kOhms	SOT-723	500 nA	NPN - Pre-Biased	250 MHz	300 mV	VESM	Surface Mount	100 mA	50 V	4.7 kOhms
Toshiba Semiconductor and Storage RN1116,LF(CT	50	100 mW	10 kOhms	SC-75 SOT-416	500 nA	NPN - Pre-Biased	250 MHz	300 mV	SSM	Surface Mount	100 mA	50 V	4.7 kOhms