STF6N60DM2
ObsoleteMOSFET N-CH 600V 5A TO220FP
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STF6N60DM2
ObsoleteMOSFET N-CH 600V 5A TO220FP
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Technical Specifications
Parameters and characteristics for this part
| Specification | STF6N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 274 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
STF6N62K3 Series
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in TO-220FP package
| Part | Operating Temperature | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | Mounting Type | FET Type | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 150 °C | TO-220-3 Full Pack | 875 pF | 5.5 A | 1.28 Ohm | 34 nC | 10 V | 30 V | TO-220FP | Through Hole | N-Channel | MOSFET (Metal Oxide) | 4.5 V | 620 V | ||||||
STMicroelectronics | TO-220-3 Full Pack | 232 pF | 4.5 A | 8 nC | 10 V | 25 V | TO-220FP | Through Hole | N-Channel | MOSFET (Metal Oxide) | 4 V | 600 V | 1.2 Ohm | 20 W | -55 °C | 150 °C | ||||
STMicroelectronics | TO-220-3 Full Pack | 5 A | 1.1 Ohm | 10 V | 25 V | TO-220FP | Through Hole | N-Channel | MOSFET (Metal Oxide) | 4.75 V | 600 V | 20 W | -55 °C | 150 °C | 6.2 nC | 274 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STF6N62K3 Series
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Documents
Technical documentation and resources