Technical Specifications
Parameters and characteristics for this part
| Specification | STF6N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 232 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs [Max] | 1.2 Ohm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF6N62K3 Series
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Documents
Technical documentation and resources
Datasheet
DatasheetDatasheet
DatasheetAN4829
Application Notes (5 of 9)AN4720
Application Notes (5 of 9)Flyers (5 of 10)
DS9734
Product SpecificationsTN1224
Technical Notes & ArticlesFlyers (5 of 10)
Flyers (5 of 10)
AN4406
Application Notes (5 of 9)AN4742
Application Notes (5 of 9)Flyers (5 of 10)
Flyers (5 of 10)
AN2842
Application Notes (5 of 9)Flyers (5 of 10)
UM1575
User ManualsFlyers (5 of 10)
AN4250
Application Notes (5 of 9)TN1378
Technical Notes & ArticlesTN1156
Technical Notes & ArticlesFlyers (5 of 10)
Flyers (5 of 10)
AN2344
Application Notes (5 of 9)AN4337
Application Notes (5 of 9)Flyers (5 of 10)
