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IRF7480MTRPBF - DirectFET Isometric ME

IRF7480MTRPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.2 MOHM;

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IRF7480MTRPBF - DirectFET Isometric ME

IRF7480MTRPBF

Active
Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.2 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF7480MTRPBF
Current - Continuous Drain (Id) @ 25°C217 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]185 nC
Input Capacitance (Ciss) (Max) @ Vds6680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDirectFET™ Isometric ME
Power Dissipation (Max)96 W
Rds On (Max) @ Id, Vgs1.2 mOhm
Supplier Device PackageDirectFET™ Isometric ME
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.22
10$ 2.10
100$ 1.46
500$ 1.18
1000$ 1.10
2000$ 1.04
Digi-Reel® 1$ 3.22
10$ 2.10
100$ 1.46
500$ 1.18
1000$ 1.10
2000$ 1.04
Tape & Reel (TR) 4800$ 1.04
NewarkEach (Supplied on Cut Tape) 1$ 2.28
10$ 1.88
25$ 1.79
50$ 1.71
100$ 1.63
250$ 1.62
500$ 1.60

Description

General part information

IRF7480 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Documents

Technical documentation and resources