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STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.2 MOHM;
| Part | Package / Case | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DirectFET™ Isometric ME | 96 W | MOSFET (Metal Oxide) | 6 V 10 V | 1.2 mOhm | 3.9 V | Surface Mount | N-Channel | 6680 pF | 40 V | 185 nC | -55 °C | 150 °C | 20 V | 217 A | DirectFET™ Isometric ME |