IXTA02N250

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IXYS

MOSFET N-CH 2500V 200MA TO263

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Unknown

IXYS

MOSFET N-CH 2500V 200MA TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA02N250

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	2500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	116 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	450 Ohm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Package / Case	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXTA02N450HV	750 Ohm	200 mA	-55 °C	150 °C	N-Channel	10 V	6.5 V	4500 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	TO-263AA	113 W	10.4 nC
IXYS IXTA02N250	450 Ohm	200 mA	-55 °C	150 °C	N-Channel	10 V	4.5 V	2500 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	TO-263AA			7.4 nC	83 W	116 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 7.29

General part information

N-Channel 2500 V 200mA (Tc) 83W (Tc) Surface Mount TO-263AA

Technical documentation and resources