MOSFET N-CH 4500V 200MA TO263
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Package / Case | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 750 Ohm | 200 mA | -55 °C | 150 °C | N-Channel | 10 V | 6.5 V | 4500 V | MOSFET (Metal Oxide) | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | TO-263AA | 113 W | 10.4 nC | |||
IXYS | 450 Ohm | 200 mA | -55 °C | 150 °C | N-Channel | 10 V | 4.5 V | 2500 V | MOSFET (Metal Oxide) | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | TO-263AA | 7.4 nC | 83 W | 116 pF |