STFI6N65K3

Obsolete

STMicroelectronics

MOSFET N-CH 650V 5.4A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 5.4A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI6N65K3

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	FET Type	Vgs (Max) [Max]	Power Dissipation (Max)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature
STMicroelectronics STFI6N80K5	13 nC	10 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	30 V	25 W	TO-262-3 Full Pack I2PAK	TO-281 (I2PAKFP)	270 pF	5 V	1.6 Ohm	-55 °C	150 °C	800 V	4.5 A
STMicroelectronics STFI6N65K3		10 V	Through Hole	MOSFET (Metal Oxide)	N-Channel			TO-262-3 Full Pack I2PAK	TO-281 (I2PAKFP)	880 pF	4.5 V	1.3 Ohm			650 V	5.4 A	30 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 5.4A (Tc) 30W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources