MOSFET N-CH 800V 4.5A I2PAKFP
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | FET Type | Vgs (Max) [Max] | Power Dissipation (Max) | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 13 nC | 10 V | Through Hole | MOSFET (Metal Oxide) | N-Channel | 30 V | 25 W | TO-262-3 Full Pack I2PAK | TO-281 (I2PAKFP) | 270 pF | 5 V | 1.6 Ohm | -55 °C | 150 °C | 800 V | 4.5 A | ||
STMicroelectronics | 10 V | Through Hole | MOSFET (Metal Oxide) | N-Channel | TO-262-3 Full Pack I2PAK | TO-281 (I2PAKFP) | 880 pF | 4.5 V | 1.3 Ohm | 650 V | 5.4 A | 30 V | 150 °C |