TK16G60W,RVQ

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Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A D2PAK

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Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK16G60W,RVQ

Current - Continuous Drain (Id) @ 25°C	15.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature
Toshiba Semiconductor and Storage TK16G60W,RVQ	190 mOhm	MOSFET (Metal Oxide)	15.8 A	D2PAK	38 nC	10 V	Surface Mount	130 W	30 V	1350 pF	N-Channel	600 V	3.7 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C

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General part information

N-Channel 600 V 15.8A (Ta) 130W (Tc) Surface Mount D2PAK

Technical documentation and resources