TK16G60W Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.19 Ω@10V, D2PAK, DTMOSⅣ
| Part | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | FET Type | Package Name | Package / Case | Technology | Power Dissipation (Max) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 15.8 A | 190 mOhm | 1350 pF | 30 V | Surface Mount | 600 V | 3.7 V | N-Channel | D2PAK | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 130 W | 150 °C | 10 V | 38 nC |