ESDLWHRVG

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Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SOD123W

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Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	ESDLWHRVG

Capacitance @ Vr, F	21 pF
Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	1 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123W
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Grade	Qualification
Taiwan Semiconductor Corporation ESDLW RVG	Standard	35 ns	21 pF	150 °C	-55 °C	1 µA	200 mA 500 ns	950 mV	SOD-123W	Surface Mount	800 mA	200 V	SOD-123W
Taiwan Semiconductor Corporation ESDLW	Standard	35 ns	21 pF	150 °C	-55 °C	1 µA	200 mA 500 ns	950 mV	SOD-123W	Surface Mount	800 mA	200 V	SOD-123W
Taiwan Semiconductor Corporation ESDLWHRVG	Standard	35 ns	21 pF	150 °C	-55 °C	1 µA	200 mA 500 ns	950 mV	SOD-123W	Surface Mount	800 mA	200 V	SOD-123W	Automotive	AEC-Q101

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General part information

Diode 200 V 800mA Surface Mount SOD-123W

Technical documentation and resources

No documents available