ESDLW RVG

Active

Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SOD123W

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	ESDLW RVG

Capacitance @ Vr, F	21 pF
Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123W
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Grade	Qualification
Taiwan Semiconductor Corporation ESDLW RVG	Standard	35 ns	21 pF	150 °C	-55 °C	1 µA	200 mA 500 ns	950 mV	SOD-123W	Surface Mount	800 mA	200 V	SOD-123W
Taiwan Semiconductor Corporation ESDLW	Standard	35 ns	21 pF	150 °C	-55 °C	1 µA	200 mA 500 ns	950 mV	SOD-123W	Surface Mount	800 mA	200 V	SOD-123W
Taiwan Semiconductor Corporation ESDLWHRVG	Standard	35 ns	21 pF	150 °C	-55 °C	1 µA	200 mA 500 ns	950 mV	SOD-123W	Surface Mount	800 mA	200 V	SOD-123W	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 800mA Surface Mount SOD-123W

Technical documentation and resources

No documents available