IRF5852TRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 2.7A 6TSOP

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IRF5852TRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 2.7A 6TSOP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF5852TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	960 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.25 V

IRF58 Series

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power - Max [Max]	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IRF5850TRPBF	20 V	5.4 nC	2 P-Channel	2.2 A	6-TSOP	1.2 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount	320 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	135 mOhm
Infineon Technologies IRF5852TR	20 V		2 N-Channel (Dual)	2.7 A	6-TSOP	1.25 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount		-55 °C	150 °C	MOSFET (Metal Oxide)	90 mOhm	6 nC	400 pF
Infineon Technologies IRF5852TRPBF	20 V		2 N-Channel (Dual)	2.7 A	6-TSOP	1.25 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount		-55 °C	150 °C	MOSFET (Metal Oxide)	90 mOhm	6 nC	400 pF
Infineon Technologies IRF5851TRPBF	20 V		N and P-Channel	2.2 A 2.7 A	6-TSOP	1.25 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount		-55 °C	150 °C	MOSFET (Metal Oxide)	90 mOhm	6 nC	400 pF
Infineon Technologies IRF5851	20 V		N and P-Channel	2.2 A 2.7 A	6-TSOP	1.25 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount				MOSFET (Metal Oxide)	90 mOhm	6 nC	400 pF
Infineon Technologies IRF5851TR	20 V		N and P-Channel	2.2 A 2.7 A	6-TSOP	1.25 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount		-55 °C	150 °C	MOSFET (Metal Oxide)	90 mOhm	6 nC	400 pF
Infineon Technologies IRF5810TRPBF	20 V		2 P-Channel	2.9 A	6-TSOP	1.2 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount	650 pF	-55 °C	150 °C	MOSFET (Metal Oxide)		9.6 nC		90 mOhm
Infineon Technologies IRF5850TR	20 V	5.4 nC	2 P-Channel	2.2 A	6-TSOP	1.2 V	SOT-23-6 Thin TSOT-23-6	960 mW	Logic Level Gate	Surface Mount	320 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	135 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRF58 Series

Mosfet Array 20V 2.7A 960mW Surface Mount 6-TSOP

Documents

Technical documentation and resources