MOSFET 2P-CH 20V 2.2A 6TSOP
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Power - Max [Max] | FET Feature | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 5.4 nC | 2 P-Channel | 2.2 A | 6-TSOP | 1.2 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | 320 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 135 mOhm | |||
Infineon Technologies | 20 V | 2 N-Channel (Dual) | 2.7 A | 6-TSOP | 1.25 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 90 mOhm | 6 nC | 400 pF | |||
Infineon Technologies | 20 V | 2 N-Channel (Dual) | 2.7 A | 6-TSOP | 1.25 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 90 mOhm | 6 nC | 400 pF | |||
Infineon Technologies | 20 V | N and P-Channel | 2.2 A 2.7 A | 6-TSOP | 1.25 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 90 mOhm | 6 nC | 400 pF | |||
Infineon Technologies | 20 V | N and P-Channel | 2.2 A 2.7 A | 6-TSOP | 1.25 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | MOSFET (Metal Oxide) | 90 mOhm | 6 nC | 400 pF | |||||
Infineon Technologies | 20 V | N and P-Channel | 2.2 A 2.7 A | 6-TSOP | 1.25 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 90 mOhm | 6 nC | 400 pF | |||
Infineon Technologies | 20 V | 2 P-Channel | 2.9 A | 6-TSOP | 1.2 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | 650 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 9.6 nC | 90 mOhm | |||
Infineon Technologies | 20 V | 5.4 nC | 2 P-Channel | 2.2 A | 6-TSOP | 1.2 V | SOT-23-6 Thin TSOT-23-6 | 960 mW | Logic Level Gate | Surface Mount | 320 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 135 mOhm |