GAN140-650FBEZ

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Nexperia USA Inc.

GAN FETS 650 V, 190 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 8 MM X 8 MM PACKAGE

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GAN140-650FBEZ

Active

Nexperia USA Inc.

GAN FETS 650 V, 190 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 8 MM X 8 MM PACKAGE

Find alt

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Description Specifications Series Pricing CAD Documents

Description

General part information

GAN140 Series

The GAN140-650EBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.

Technical Specifications

Parameters and characteristics for this part

Specification	GAN140-650FBEZ

Current - Continuous Drain (Id) (Tc)	17 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Max)	3.5 nC
Input Capacitance (Ciss) (Max)	125 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Name	DFN5060-5
Power Dissipation (Max)	113 W
Rds On (Max)	140 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max) Positive	7 V
Vgs(th) (Max)	2.5 V

GAN140 Series

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Part	Vgs (Max) Positive	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	FET Type	Package Name	Mounting Type	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max)
Nexperia USA Inc. GAN140-650EBEZ	7 V	3.5 nC	650 V	GaNFET (Gallium Nitride)	140 mOhm	N-Channel	DFN8080-8	Surface Mount Wettable Flank	17 A	-55 °C	150 °C	2.5 V	113 W	6 V	8-VDFN Exposed Pad	125 pF
Nexperia USA Inc. GAN140-650FBEZ	7 V	3.5 nC	650 V	GaNFET (Gallium Nitride)	140 mOhm	N-Channel	DFN5060-5	Surface Mount Wettable Flank	17 A	-55 °C	150 °C	2.5 V	113 W	6 V	8-PowerVDFN	125 pF