GAN140 Series

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Catalog

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Part	Vgs (Max) Positive	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	FET Type	Package Name	Mounting Type	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max)
Nexperia USA Inc. GAN140-650EBEZ	7 V	3.5 nC	650 V	GaNFET (Gallium Nitride)	140 mOhm	N-Channel	DFN8080-8	Surface Mount Wettable Flank	17 A	-55 °C	150 °C	2.5 V	113 W	6 V	8-VDFN Exposed Pad	125 pF
Nexperia USA Inc. GAN140-650FBEZ	7 V	3.5 nC	650 V	GaNFET (Gallium Nitride)	140 mOhm	N-Channel	DFN5060-5	Surface Mount Wettable Flank	17 A	-55 °C	150 °C	2.5 V	113 W	6 V	8-PowerVDFN	125 pF

Catalog

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Description

The GAN140-650EBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.