DMNH6021SPS-13

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Diodes Inc

TRANS MOSFET N-CH 60V 55A 8-PIN POWERDI EP T/R

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DMNH6021SPS-13

Active

Diodes Inc

TRANS MOSFET N-CH 60V 55A 8-PIN POWERDI EP T/R

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DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMNH6021SPS-13

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.7 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	53 W, 1.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMNH6021SPDWQ Series

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Qualification	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Configuration
Diodes Inc DMNH6021SPS-13	4.5 V 10 V	Automotive	-55 °C	175 ░C	20 V	PowerDI5060-8	23 mOhm	Surface Mount	8-PowerTDFN	19.7 nC	3 V	N-Channel	AEC-Q101	60 V	1.6 W 53 W	MOSFET (Metal Oxide)	55 A
Diodes Inc DMNH6021SPSW-13	4.5 V 10 V		-55 °C	175 ░C	20 V	PowerDI5060-8 (Type UX)	23 mOhm	Surface Mount Wettable Flank	8-PowerTDFN	20.1 nC	3 V	N-Channel		60 V		MOSFET (Metal Oxide)	44 A	1132 pF
Diodes Inc DMNH6021SPDWQ-13		Automotive	-55 °C	175 ░C		PowerDI5060-8 (Type R)	25 mOhm	Surface Mount Wettable Flank	8-PowerTDFN	20.1 nC	3 V		AEC-Q101	60 V		MOSFET (Metal Oxide)	8.2 A 32 A	1143 pF	1.5 W	2 N-Channel (Dual)
Diodes Inc DMNH6021SK3-13	4.5 V 10 V	Automotive	-55 °C	175 ░C	20 V	TO-252-3	23 mOhm	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	20.1 nC	3 V	N-Channel	AEC-Q101	60 V	2.1 W	MOSFET (Metal Oxide)	50 A	1143 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.28
		5000	$ 0.26
		7500	$ 0.25
		12500	$ 0.24

Description

General part information

DMNH6021SPDWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: backlighting, power-management functions, and DC-DC converters.