Catalog
60V +175°C N-Channel Enhancement Mode MOSFET
Key Features
• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments
• 100% Unclamped Inductive Switch (UIS) Test in Production
• High Conversion Efficiency
• Low RDS(ON) – Minimizes On State Losses
• Low Input Capacitance
• Fast Switching Speed
• Wettable Flank for Improved Optical Inspection
• Lead-Free Finish; RoHS Compliant
• Halogen and Antimony Free. "Green" Device
• For automotive applications requiring specific change control(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), please referto the related automotive grade (Q-suffix) part. A listing canbe found athttps://www.diodes.com/products/automotive/
• This part is qualified to JEDEC standards (as references inAEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/
Description
AI
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: backlighting, power-management functions, and DC-DC converters.