RN1906,LF

Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS 2NPN 50V 100MA US6

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Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS 2NPN 50V 100MA US6

Technical Specifications

Parameters and characteristics for this part

Specification	RN1906,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	US6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Supplier Device Package	Power - Max [Max]	Grade	Current - Collector Cutoff (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification
Toshiba Semiconductor and Storage RN1906,LXHF(CT	2 NPN - Pre-Biased (Dual)	250 MHz	80	100 mA	4.7 kOhms	US6	200 mW	Automotive	500 nA	6-TSSOP SC-88 SOT-363	300 mV	47000 Ohms	Surface Mount	50 V	AEC-Q101
Toshiba Semiconductor and Storage RN1906FE(T5L,F,T)	2 NPN - Pre-Biased (Dual)	250 MHz	80	100 mA	4.7 kOhms	ES6	100 mW		100 nA	SOT-563 SOT-666	300 mV	47000 Ohms	Surface Mount	50 V
Toshiba Semiconductor and Storage RN1906,LF	2 NPN - Pre-Biased (Dual)	250 MHz	80	100 mA	4.7 kOhms	US6	200 mW		500 nA	6-TSSOP SC-88 SOT-363	300 mV	47000 Ohms	Surface Mount	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Technical documentation and resources