RN1906 Series

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)

Catalog

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)

Part	Current - Collector (Ic) (Max)	Package / Case	Grade	Qualification	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) Resistance	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Vce Saturation (Max)	Package Name	Resistor - Emitter Base (R2)	Power - Max	NPN Count	Transistor Type	Transistor Configuration	Mounting Type
Toshiba Semiconductor and Storage RN1906,LXHF(CT	0.1 mA	6-TSSOP SC-88 SOT-363	Automotive	AEC-Q101	250 MHz	50 V	4.7 kOhm	80	500 nA	300 mV	US6	47 kOhm	200 mW	2	NPN	Dual Pre-Biased	Surface Mount
Toshiba Semiconductor and Storage RN1906,LF(CT	0.1 mA	6-TSSOP SC-88 SOT-363			250 MHz	50 V	4.7 kOhm	80	500 nA	300 mV	US6	47 kOhm	200 mW	2	NPN	Dual Pre-Biased	Surface Mount
Toshiba Semiconductor and Storage RN1906FE(T5L,F,T)	0.1 mA	SOT-563 SOT-666			250 MHz	50 V	4.7 kOhm	80	100 nA	300 mV	ES6	47 kOhm	100 mW	2	NPN	Dual Pre-Biased	Surface Mount
Toshiba Semiconductor and Storage RN1906,LF	0.1 mA	6-TSSOP SC-88 SOT-363			250 MHz	50 V	4.7 kOhm	80	500 nA	300 mV	US6	47 kOhm	200 mW	2	NPN	Dual Pre-Biased	Surface Mount

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)