STN1N20

Obsolete

STMicroelectronics

MOSFET N-CH 200V 1A SOT223

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Obsolete

STMicroelectronics

MOSFET N-CH 200V 1A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	STN1N20

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.7 nC
Input Capacitance (Ciss) (Max) @ Vds	206 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2.9 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STN1N20	2.9 W	15.7 nC	SOT-223	N-Channel	Surface Mount	1.5 Ohm	200 V	206 pF	5 V	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	10 V	-55 °C	150 °C	1 A	20 V
STMicroelectronics STN1NF10	2.5 W		SOT-223	N-Channel	Surface Mount	800 mOhm	100 V	105 pF	4 V	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	10 V	-55 °C	150 °C	1 A	20 V	6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 1A (Tc) 2.9W (Tc) Surface Mount SOT-223

Technical documentation and resources