MOSFET N-CH 200V 1A SOT223
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 2.9 W | 15.7 nC | SOT-223 | N-Channel | Surface Mount | 1.5 Ohm | 200 V | 206 pF | 5 V | MOSFET (Metal Oxide) | TO-261-4 TO-261AA | 10 V | -55 °C | 150 °C | 1 A | 20 V | |
STMicroelectronics | 2.5 W | SOT-223 | N-Channel | Surface Mount | 800 mOhm | 100 V | 105 pF | 4 V | MOSFET (Metal Oxide) | TO-261-4 TO-261AA | 10 V | -55 °C | 150 °C | 1 A | 20 V | 6 nC |