Technical Specifications
Parameters and characteristics for this part
| Specification | STF16N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 45 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) @ Id, Vgs | 299 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.03 | |
| 50 | $ 2.40 | |||
| 100 | $ 2.06 | |||
| 500 | $ 1.83 | |||
| 1000 | $ 1.57 | |||
| 2000 | $ 1.48 | |||
| 5000 | $ 1.42 | |||
Description
General part information
STF16N50M2 Series
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Documents
Technical documentation and resources
Datasheet
DatasheetFlyers (5 of 7)
AN2344
Application NotesTN1156
Technical Notes & ArticlesAN2842
Application NotesTN1224
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AN4337
Application NotesFlyers (5 of 7)
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AN4829
Application NotesFlyers (5 of 7)
